View BLM6G22-30_2929814.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. product profile 1.1 general description 30 w ldmos 2-stage power mmic for base st ation applications at frequencies from 2100 mhz to 2200 mhz. available in gull wing for surface mount (sot822-1) or flat lead (sot834-1). [1] test signal: 3gpp; test model 1; 64 dpch; par = 7 db at 0.01 % probability on ccdf per carrier; carrier spacing 10 mhz. 1.2 features and benefits ? typical 2-carrier w-cdma performance at a frequency of 2110 mhz: ? average output power = 2 w ? power gain = 30 db (typ) ? efficiency = 9 % ? imd3 = ? 48 dbc ? acpr = ? 50 dbc ? integrated temperature compensated bias ? excellent thermal stability ? biasing of individual stages is externally accessible ? integrated esd protection ? small component size, very su itable for pa size reduction ? on-chip matching (input matched to 50 ohm, output partially matched) ? high power gain ? designed for broadband operation (2100 mhz to 2200 mhz) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic rev. 4 ? 7 march 2011 product data sheet table 1. typical performance typical rf performance at t h = 25 c. mode of operation f v ds p l(av) g p d imd3 acpr (mhz) (v) (w) (db) (%) (dbc) (dbc) 2-carrier w-cdma 2110 to 2170 28 2 29.5 9 ? 48 [1] ? 50 [1] caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 2 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 2. pinning information 2.1 pinning 2.2 pin description 3. ordering information transparent top view. fig 1. pin configuration BLM6G22-30 BLM6G22-30g gnd gnd v ds1 n.c. n.c. n.c. n.c. rf_input rf_output/v ds2 n.c. n.c. v gs1 n.c. v gs2 gnd gnd 001aae321 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 table 2. pin description symbol pin description gnd 1, 11, 12, 16 ground v ds1 2 first stage drain-source voltage n.c. 3, 4, 5, 7, 8, 13, 15 not connected rf_input 6 rf input v gs1 9 first stage gate-source voltage v gs2 10 second stage gate-source voltage rf_out/v ds2 14 rf output or second stage drain-source voltage rf_gnd flange rf ground table 3. ordering information type number package name description version BLM6G22-30 hsop16f plastic, heatsink small outline package; 16 leads (flat) sot834-1 BLM6G22-30g hsop16 plastic, heatsink small outline package; 16 leads sot822-1
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 3 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 4. block diagram 5. limiting values 6. thermal characteristics [1] thermal resistance is determined under specific rf operating conditions. fig 2. block diagram of BLM6G22-30 and BLM6G22-30g 001aah621 2 v ds1 14 rf_output/v ds2 6 rf_input 9 v gs1 10 v gs2 temperature compensated bias table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage 0.5 +13 v i d1 first stage drain current - 3 a i d2 second stage drain current - 9 a t stg storage temperature ? 65 +150 c t j junction temperature - 200 c table 5. thermal characteristics symbol parameter conditions value unit r th(j-c)1 first stage thermal resistance from junction to case t case = 25 c; p l =2w; 2-carrier w-cdma [1] 3.9 k/w r th(j-c)2 second stage thermal resistance from junction to case t case = 25 c; p l =2w; 2-carrier w-cdma [1] 2.1 k/w
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 4 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 7. characteristics 8. application information 8.1 ruggedness the BLM6G22-30 and BLM6G22-30g are capable of withstanding a load mismatch corresponding to vswr = 5 : 1 through all phases under the following conditions: v ds =28v; i dq1 = 270 ma; i dq2 = 280 ma; p l = 2 w; 2-carrier w-cdma. 8.2 impedance information [1] device input impedance as measured from gate to ground. [2] test circuit impedance as measured from drain to ground. table 6. characteristics mode of operation: 2-carrier w-cdma; par 7 db at 0.01 % probability on ccdf; 3gpp test model 1; 1-64 pdpch; f 1 = 2112.5 mhz; f 2 = 2122.5 mhz; f 3 = 2157.5 mhz; f 4 = 2167.5 mhz; v ds = 28 v; i dq1 = 270 ma; i dq2 =280ma; t h = 25 c unless otherwise specified; in a production test circuit as described in section 9 ? test information ? . symbol parameter conditions min typ max unit g p power gain p l(av) = 2 w 27.5 30 32.5 db rl in input return loss p l(av) = 2 w - ? 14 ? 10 db d drain efficiency p l(av) = 2 w 7.5 9 - % imd3 third-order intermodulation distortion p l(av) = 2 w - ? 48 ? 44.5 dbc acpr adjacent channel power ratio p l(av) = 2 w - ? 50 ? 47 dbc table 7. typical impedance f z i [1] z l [2] mhz 2075 40.9 + j22.8 18.0 ? j5.5 2085 41.2 + j23.2 17.8 ? j5.6 2095 41.6 + j23.3 17.7 ? j5.7 2105 41.9 + j23.3 17.7 ? j5.9 2115 42.1 + j23.3 17.6 ? j6.0 2125 42.2 + j23.2 17.4 ? j6.0 2135 42.4 + j23.1 17.3 ? j6.1 2145 42.3 + j22.9 17.2 ? j6.1 2155 42.5 + j22.8 17.0 ? j6.2 2165 42.6 + j22.8 16.8 ? j6.3 2175 42.7 + j22.8 16.6 ? j6.4 2185 43.0 + j23.0 16.4 ? j6.6 2195 43.6 + j23.1 16.3 ? j6.9 2205 44.2 + j23.3 16.1 ? j7.2
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 5 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 8.3 performance curves performance curves are measured in a BLM6G22-30g application circuit. t case = 25 c; v ds = 28 v; p l(av) =2w; i dq1 = 270 ma; i dq2 = 280 ma; carrier spacing = 10 mhz. t case = 25 c; v ds = 28 v; p l(av) =2w; i dq1 =270ma; i dq2 = 280 ma; carrier spacing = 10 mhz. fig 3. 2-carrier w-cdma power gain and drain efficiency as functions of frequency; typical values fig 4. 2-carrier w-cdma adjacent power channel ratio and third order intermodulation distortion as functions of frequency; typical values v ds = 28 v; i dq1 =270ma; i dq2 = 280 ma; carrier spacing = 10 mhz. (1) t case = ? 30 c (2) t case = 25 c (3) t case = 85 c v ds = 28 v; i dq1 = 270 ma; i dq2 = 280 ma; carrier spacing = 10 mhz. (1) t case = ? 30 c (2) t case = 25 c (3) t case = 85 c fig 5. 2-carrier w-cdma power gain and drain efficiency as functions of average output power and temperature; typical values fig 6. 2-carrier w-cdma adjacent power channel ratio and third order intermodulation distortion as functions of average output power and temperature; typical values f (mhz) 2050 2250 2200 2100 2150 001aah622 29 31 27 33 35 g p (db) 25 9 11 7 13 15 d (%) 5 g p d f (mhz) 2050 2250 2200 2100 2150 001aah623 ? 49 ? 47 ? 45 imd3, acpr (dbc) ? 51 imd3 acpr 001aah624 30 26 34 38 28 32 36 g p (db) 24 15 5 25 35 10 20 30 d (%) 0 p l(av) (w) 10 ? 1 10 2 10 1 (1) (1), (2), (3) (2) (3) g p g p g p d 001aah625 ? 40 ? 50 ? 30 ? 20 ? 45 ? 35 ? 25 imd3, acpr (dbc) ? 55 p l(av) (w) 10 ? 1 10 2 10 1 (1) (1) (2) (2) (3) (3) imd3 acpr
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 6 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic f = 2140 mhz; i dq1 = 270 ma; i dq2 = 280 ma. (1) v ds = 24 v (2) v ds = 28 v (3) v ds = 32 v i dq1 = 270 ma; i dq2 = 280 ma; f 1 = 2140 mhz; f 2 = 2140.1 mhz. fig 7. one-tone cw power gain as function of output power and drain-source voltage; typical value fig 8. two-tone cw intermodulation distortion as function of peak envelope load power; typical value test signal: is-95 with pilot, paging, sync and 6 traffic channels (walsh codes 8 to 13). par = 9.7 db at 0.01 % probability on the ccdf. (1) t case = ? 30 c (2) t case = 25 c (3) t case = 85 c fig 9. single-carrier peak output power as function of frequency and temperature; typical values p l (w) 040 30 10 20 001aah626 28 26 30 32 g p (db) 24 (1) (2) (3) 001aah627 ? 60 ? 80 ? 40 ? 20 ? 70 ? 50 ? 30 imd (dbc) ? 90 p l(pep) (w) 10 ? 1 10 2 10 1 imd3 imd5 imd7 f (mhz) 2050 2250 2200 2100 2150 001aah628 23 27 19 31 35 p l(m) (w) 15 (1) (2) (3)
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 7 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 9. test information [1] american technical cera mics (atc) type 100a or capacitor of same quality. striplines are on a double copper-clad rogers 4350b printed-circuit board (pcb) with r = 3.5; thickness = 0.76 mm. see table 8 for a list of components. fig 10. component layout for 2110 mhz to 2170 mhz circuit for 2-carrier w-cdma 001aah62 9 c3 c1 c4 r1 c2 c8 r2 c5 c7 c6 c10 c12 c9 c11 c15 c13 c14 table 8. list of components for test circuit see figure 10 . component description value remarks c1, c13 multilayer ceramic chip capacitor 0.3 pf [1] c2, c4, c8, c11, c12 multilaye r ceramic chip capacitor 4.7 f; 50 v c3, c15 electrolytic capacitor 220 f; 35 v c5, c9, c10, c14 multilayer ceramic chip capacitor 10 pf [1] c6, c7 multilayer ceramic chip capacitor 100 nf r1 smd resistor 0805 1 k r2 smd resistor 0805 3.9 k
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 8 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 10. package outline fig 11. package outline sot834-1 (hsop16f) references outline version european projection issue date iec jedec jeita sot834-1 sot834-1_po 03-10-22 10-10-20 unit (1) mm max nom min dimensions note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. v a y w w b p (10 ) w h sop16f: plastic, heatsink small outline package; 16 leads (flat) sot834- 1 e 3 (2 ) 12 16 11 1 x e c d e 2 e 1 (6 ) (2 ) e 2 (4 ) d 2 z b p2 b p1 (5 ) d 1 h e e 1 a e pin 1 index 0 5 10 mm scale 0.43 0.28 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 1.02 1.37 16.2 15.8 1.7 1.5 a 2 b p b p1 1.09 0.94 5.87 5.72 3.5 3.2 b p2 cd (1) d 1 0.25 wyz d 2 e (1) e 1 e 2 ee 1 e 2 5.69 e 3 3.81 0.1 2.5 2.0 h e q 1 0.25 v detail x q 1 a 2
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 9 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic fig 12. package outline sot822-1 (hsop16) references outline version european projection issue date iec jedec jeita sot822-1 sot822-1_po 07-02-08 10-10-20 unit (1) mm max nom min 3.6 0.2 0 0.35 0.06 ? 0.06 0.43 0.28 1.09 0.94 5.87 5.72 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 1.02 1.37 a dimensions note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included a 1 a 2 3.5 3.2 a 3 a 4 b p b p1 3.81 e 3 h e l p b p2 cd (1) d 1 d 2 e (1) e 1 6.2 5.8 e 2 2.9 2.5 14.5 13.9 1.1 0.8 ee 1 5.69 e 2 sot822- 1 h sop16: plastic, heatsink small outline package; 16 leads y d a va x e c e 2 h e b p (10 ) w w 11 16 1 pin 1 index e 1 d 2 e 3 (2 ) e 1 (2 ) e 2 (4 ) e (6 ) b p2 b p1 (5 ) d 1 12 z 0.1 2.5 2.0 8 0 yz 0.25 v 0.25 w 1.5 1.4 q w 0 5 10 mm scale detail x l p q a a 4 (a 3 ) a 1 a 2
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 10 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 11. handling information 11.1 esd protection 11.2 moisture sensitivity 12. abbreviations table 9. esd protection characteristics test condition class human body model (hbm) 1 machine model (mm) 1 table 10. moisture sensitivity level test methodology class jesd-22-a113 3 table 11. abbreviations acronym description 3gpp third generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel is-95 interim standard 95 ldmos laterally diffused metal-oxide semiconductor mmic monolithic microwave integrated circuit pa power amplifier par peak-to-average power ratio pdpch transmission power of the dedicated physical channel rf radio frequency vswr voltage standing-wave ratio w-cdma wideband code division multiple access
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 11 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 13. revision history table 12. revision history document id release date data sheet status change notice supersedes BLM6G22-30_BLM6G22-30g v.4 20110307 product data sheet - BLM6G22-30_BLM6G22-30g v.3 modifications: ? data sheet status has been changed to ?product data sheet? ? table 6 on page 4 : the values of rl in have been depicted on a negative scale BLM6G22-30_BLM6G22-30g v.3 20081121 prelimin ary data sheet - blm6g 22-30_BLM6G22-30g v.2 BLM6G22-30_BLM6G22-30g v.2 20080904 prelimin ary data sheet - blm6g 22-30_BLM6G22-30g v.1 BLM6G22-30_BLM6G22-30g v.1 20080303 objective data sheet - -
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 12 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 14.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 14.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BLM6G22-30_BLM6G22-30g all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights res erved. product data sheet rev. 4 ? 7 march 2011 13 of 14 nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 14.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLM6G22-30; BLM6G22-30g w-cdma 2100 mhz to 2200 mhz power mmic ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 7 march 2011 document identifier: BLM6G22-30_BLM6G22-30g please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 16. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 2.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 4 8.1 ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.2 impedance information . . . . . . . . . . . . . . . . . . . 4 8.3 performance curves . . . . . . . . . . . . . . . . . . . . . 5 9 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 handling information. . . . . . . . . . . . . . . . . . . . 10 11.1 esd protection . . . . . . . . . . . . . . . . . . . . . . . . 10 11.2 moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 14.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15 contact information. . . . . . . . . . . . . . . . . . . . . 13 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

▲Up To Search▲

Price & Availability of BLM6G22-30

	To Download BLM6G22-30 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .